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1 mrf5s19150 mrf5s19150r3 MRF5S19150S MRF5S19150Sr3 motorola rf device data the rf sub?micron mosfet line n?channel enhancement?mode lateral mosfets designed for pcn and pcs base station applications at frequencies from 1.9 to 2.0 ghz. suitable for tdma, cdma and multicarrier amplifier applications. ? typical 2?carrier n?cdma performance for v dd = 28 volts, p out = 32 watts, i dq = 1400 ma, f1 = 1958.75 mhz, f2 = 1961.25 mhz is?95 cdma (pilot, sync, paging, traffic codes 8 through 13) 1.2288 mhz channel bandwidth carrier. adjacent channels measured over a 30 khz bandwidth at f1 ?885 khz and f2 +885 khz. distortion products measured over 1.2288 mhz bandwidth at f1 ?2.5 mhz and f2 +2.5 mhz. peak/avg. = 9.8 db @ 0.01% probability on ccdf. output power ? 32 watts avg. power gain ? 14 db efficiency ? 26% acpr ? ?50 db im3 ? ?36.5 dbc ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 5:1 vswr, @ 28 vdc, f1 = 1960 mhz, 100 watts cw output power ? excellent thermal stability ? qualified up to a maximum of 32 v operation ? available in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. maximum ratings rating symbol value unit drain?source voltage v dss 65 vdc gate?source voltage v gs ?0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 357 2 watts w/ c storage temperature range t stg ?65 to +150 c operating junction temperature t j 200 c cw operation cw 100 watts thermal characteristics characteristic symbol max unit thermal resistance, junction to case case temperature 80 c, 100 w cw case temperature 80 c, 32 w cw r jc 0.49 0.53 c/w note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by mrf5s19150/d semiconductor technical data 1990 mhz, 32 w, 28 v lateral n?channel rf power mosfets case 465c?02, style 1 ni?880s MRF5S19150S, r3 case 465b?03, style 1 ni?880 mrf5s19150, r3 ? motorola, inc. 2003 rev 0
mrf5s19150 mrf5s19150r3 MRF5S19150S MRF5S19150Sr3 2 motorola rf device data esd protection characteristics test conditions class human body model 1 (minimum) machine model m3 (minimum) charge device model c7 (minimum) electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate?source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 360 adc) v gs(th) 2.5 2.8 3.5 vdc gate quiescent voltage (v ds = 28 vdc, i d = 1400 madc) v gs(q) ? 3.8 ? vdc drain?source on?voltage (v gs = 10 vdc, i d = 3.6 adc) v ds(on) ? 0.24 ? vdc forward transconductance (v ds = 10 vdc, i d = 3.6 adc) g fs ? 9 ? s dynamic characteristics reverse transfer capacitance (1) (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss ? 3.1 ? pf functional tests (in motorola test fixture, 50 ohm system) 2?carrier n?cdma, 1.2288 mhz channel bandwidth carriers. peak/avg = 9.8 db @ 0.01% probability on ccdf. common?source amplifier power gain (v dd = 28 vdc, p out = 32 w avg, i dq = 1400 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) g ps 13 14 ? db drain efficiency (v dd = 28 vdc, p out = 32 w avg, i dq = 1400 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) 24 26 ? % third order intermodulation distortion (v dd = 28 vdc, p out = 32 w avg, i dq = 1400 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz; im3 measured over 1.2288 mhz bandwidth at f1 ?2.5 mhz and f2 +2.5 mhz referenced to carrier channel power.) im3 ? ?36.5 ?35 dbc adjacent channel power ratio (v dd = 28 vdc, p out = 32 w avg, i dq = 1400 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz; acpr measured over 30 khz bandwidth at f1 ?885 mhz and f2 +885 mhz) acpr ? ?50 ?48 dbc input return loss (v dd = 28 vdc, p out = 32 w avg, i dq = 1400 ma, f1 = 1930 mhz, f2 = 1932.5 mhz and f1 = 1987.5 mhz, f2 = 1990 mhz) irl ? ?17 ?9 db (1) part is internally matched both on input and output.
3 mrf5s19150 mrf5s19150r3 MRF5S19150S MRF5S19150Sr3 motorola rf device data figure 1. mrf5s19150 test circuit schematic z9 1.280 x 0.046 microstrip z10 0.090 x 1.055 microstrip z11 1.125 x 0.068 microstrip z12 1.125 x 0.068 microstrip z13 0.505 x 1.055 microstrip z14 0.898 x 0.105 microstrip z15 1.133 x 0.082 microstrip pcb arlon gx0300?55?22, 0.03 , r = 2.55 z1 1.023 x 0.082 microstrip z2 0.398 x 0.082 microstrip z3 0.203 x 0.082 microstrip z4 0.074 x 0.082 microstrip z5 0.630 x 0.084 microstrip z6 0.557 x 1.030 x 0.237 microstrip taper z7 0.103 x 1.030 microstrip z8 1.280 x 0.046 microstrip table 1. mrf5s19150 test circuit component designations and values part description b1, b2 short rf beads c1, c2 0.6 ? 4.5 variable capacitors, gigatrim c3 0.8 pf chip capacitor, b case c4, c5, c13, c14, c24, c25 9.1 pf chip capacitors, b case c8, c10 1.0 f, 50 v smt tantalum capacitors c6, c12, c16, c17, c18, c27, c28, c29 0.1 f chip capacitors, b case c7, c11, c15, c26 1000 pf chip capacitors, b case c9 100 f, 50 v electrolytic capacitor c23 470 f, 63 v electrolytic capacitor c19, c20, c21, c22, c30, c31, c32, c33 22 f, 35 v tantalum capacitors r1 1 k chip resistor r2 560 k chip resistor r3, r4 12 chip resistors
mrf5s19150 mrf5s19150r3 MRF5S19150S MRF5S19150Sr3 4 motorola rf device data figure 2. mrf5s19150 test circuit component layout mrf5s19150 rev 4 cut out area
5 mrf5s19150 mrf5s19150r3 MRF5S19150S MRF5S19150Sr3 motorola rf device data typical characteristics figure 3. 2?carrier n?cdma broadband performance figure 4. two?tone power gain versus output power figure 5. third order intermodulation versus output power figure 6. intermodulation distortion products versus tone spacing figure 7. pulse cw output power versus input power
mrf5s19150 mrf5s19150r3 MRF5S19150S MRF5S19150Sr3 6 motorola rf device data typical characteristics figure 8. 2?carrier n?cdma acpr, im3, power gain, drain efficiency versus output power figure 9. 2?carrier n?cdma spectrum figure 10. mtbf factor versus junction temperature
7 mrf5s19150 mrf5s19150r3 MRF5S19150S MRF5S19150Sr3 motorola rf device data figure 11. series equivalent input and output impedance f mhz z source ? z load ? 1930 1960 1990 1.89 ? j5.24 1.3 ? j5.49 1.64 ? j5.29 1.06 ? j1.58 0.88 ? j1.37 0.90 ? j1.21 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground.
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mrf5s19150 mrf5s19150r3 MRF5S19150S MRF5S19150Sr3 8 motorola rf device data notes
9 mrf5s19150 mrf5s19150r3 MRF5S19150S MRF5S19150Sr3 motorola rf device data notes
mrf5s19150 mrf5s19150r3 MRF5S19150S MRF5S19150Sr3 10 motorola rf device data notes
11 mrf5s19150 mrf5s19150r3 MRF5S19150S MRF5S19150Sr3 motorola rf device data package dimensions case 465b?03 issue b ni?880 mrf5s19150, r3 d g k c e h f q 2x b b (flange) aa (flange) t n (lid) m (insulator) s (insulator) r (lid) !!! case 465c?02 issue a ni?880s MRF5S19150S, r3 d k c e h f b b (flange) aa (flange) t n (lid) m (insulator) r (lid) s (insulator) !!!
mrf5s19150 mrf5s19150r3 MRF5S19150S MRF5S19150Sr3 12 motorola rf device data information in this document is provided solely to enable system and software implementers to use motorola products. there are no express or i mplied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th is document. motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represen tation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? param eters that may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all oper ating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical impl ant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a s ituation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer s hall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and the stylized m logo are registered in the us patent and t rademark office. all other product or service names are the proper ty of their respective owners. motorola, inc. is an equal opportunity/affirmative action employer. motorola inc. 2003 how to reach us: usa/europe/locations not listed : japan : motorola japan ltd.; sps, technical information center, motorola literature distribution 3?20?1, minami?azabu, minato?ku, tokyo 106?8573, japan p.o. box 5405, denver, colorado 80217 81?3?3440?3569 1?800?521?6274 or 480?768?2130 asia/pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industrial estate, tai po, n.t., hong kong 852?26668334 home page : http://motorola.com/semiconductors mrf5s19150/d ?

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